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| NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL Features * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS 30 V http://onsemi.com Applications * CPU Power Delivery * DC-DC Converters * Low Side Switching MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25C TA = 85C TA = 25C TA = 25C Steady State TA = 85C TA = 25C TC = 25C TC = 85C TC = 25C TA = 25C, tp = 10 ms PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 26 19 2.35 16 12 0.91 191 138 125 288 -55 to +150 104 6 612.5 W A C A V/ns mJ W A W A Unit V V A RDS(ON) MAX 2.0 mW @ 10 V 3.0 mW @ 4.5 V D (5,6) ID MAX 191 A G (4) S (1,2,3) N-CHANNEL MOSFET MARKING DIAGRAM D 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 S S S G D 4833N AYWWG G D D Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VDD = 30 V, VGS = 10 V, IL = 35 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION TL 260 C Device NTMFS4833NT1G Package Shipping Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SO-8 FL 1500/Tape & Reel (Pb-Free) SO-8 FL 5000/Tape & Reel (Pb-Free) NTMFS4833NT3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 November, 2006 - Rev. 2 Publication Order Number: NTMFS4833N/D NTMFS4833N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case (Drain) Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - Steady State (Note 4) Symbol RqJC RqJA RqJA Value 1.0 53.2 137.8 C/W Unit 3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 4. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25 C TJ = 125C VGS = 0 V, ID = 250 mA 30 17 1 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.5 7.12 2.5 V mV/C VGS = 10 V to 11.5 V VGS = 4.5 V ID = 30 A ID = 15 A ID = 30 A ID = 15 A 1.3 1.3 2.3 2.3 30 2.0 mW 3.0 Forward Transconductance gFS VDS = 15 V, ID = 15 A S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 25 34 35 17 14 19 50 10 ns ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1 MHz, VDS = 12 V 5600 1200 650 39 6.0 16 17 88 nC nC 58 pF 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4833N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25C TJ = 125C - - - VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A - - - 0.8 0.68 38 19 19 36 1.0 - - - - - nC ns V Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance tRR ta tb QRR LS LD LG RG TA = 25C - - - - 0.50 0.005 1.84 1.0 - - - - nH nH nH W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4833N TYPICAL PERFORMANCE CURVES 200 ID, DRAIN CURRENT (AMPS) 175 150 125 100 75 50 25 0 0 1 2 3 4 3.4 V 3.2 V 3.0 V 2.8 V 5 200 ID, DRAIN CURRENT (AMPS) VGS = 4.0 V TJ = 25C 3.8 V 3.6 V VDS 10 V 175 150 125 100 TJ = 125C 75 50 25 TJ = -55C 0 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25C 4.2 V thru 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.010 ID = 30 A TJ = 25C 0.004 TJ = 25C 0.003 VGS = 4.5 V 0.002 VGS = 11.5 V 0.001 0.008 0.006 0.004 0.002 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 25 50 75 100 125 150 175 200 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0 -50 100 -25 0 25 50 75 100 125 150 ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 10,000 100,000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 125C 1,000 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTMFS4833N TYPICAL PERFORMANCE CURVES 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 Crss 3000 2000 1000 0 -10 VDS = 0 V -5 VGS 0 VDS VGS = 0 V 5 10 15 20 25 Coss Ciss TJ = 25C 12 10 8 6 4 2 0 0 10 50 20 30 60 70 40 QG, TOTAL GATE CHARGE (nC) 80 90 Q1 Q2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) QT VGS Ciss ID = 30 A TJ = 25C GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 td(off) IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 15 A VGS = 11.5 V t, TIME (ns) Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 30 VGS = 0 V 25 TJ = 25C 20 15 10 5 0 tf 100 tr td(on) 10 1 10 RG, GATE RESISTANCE (W) 100 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 I D, DRAIN CURRENT (AMPS) 10 ms 100 100 ms 1 ms 10 ms dc 650 600 550 500 450 400 350 300 250 200 150 100 50 0 Figure 10. Diode Forward Voltage vs. Current ID = 35 A 10 VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 0.1 0.01 10 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTMFS4833N TYPICAL PERFORMANCE CURVES 1000 I D, DRAIN CURRENT (AMPS) 100 25C 10 100C 125C 1 1 10 1,000 100 PULSE WIDTH (ms) 10,000 Figure 13. Avalanche Characteristics http://onsemi.com 6 NTMFS4833N PACKAGE DIMENSIONS SO-8 FLAT LEAD (DFN6) CASE 488AA-01 ISSUE B 2X 0.20 C D 2 D1 6 5 A B 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C 4X E1 2 E c 1 2 3 4 q A1 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 0.99 1.20 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --- 4.22 6.15 BSC 5.50 5.80 6.10 3.45 --- 4.30 1.27 BSC 0.51 0.61 0.71 0.51 --- --- 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --- 12 _ DETAIL A b e/2 1 4 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 0.10 0.05 CAB c L K E2 L1 6 5 M G D2 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTMFS4833N/D |
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